Epitaxial silicon growth

ABSTRACT

Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., and methods of fabrication have been described that include a method of epitaxial silicon growth. The method includes providing a silicon layer on a substrate. A dielectric layer is provided on the silicon layer. A trench is formed in the dielectric layer to expose the silicon layer, the trench having trench walls in the &lt;100&gt; direction. The method includes epitaxially growing silicon between trench walls formed in the dielectric layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

The application is a continuation of U.S. application Ser. No.11/543,560 filed Oct. 4, 2006, now U.S. Pat. No. 7,498,265, the entirespecification of which is incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor devices and,more particularly, to semiconductor devices formed from epitaxialsilicon growth.

BACKGROUND

Higher performance, lower cost, increased miniaturization ofsemiconductor components, and greater packing density of integratedcircuit are ongoing goals of the semiconductor industry. Integratedcircuit (IC) processing/fabrication is used to produce transistorshaving various structures including recessed access device (RAD), Finfield effect transistor (FinFET), pseudo silicon on insulator (PSOI),and nanowire, etc., for use in dynamic random access memory (DRAM), NORand NAND Flash memory, and floating body memory, among othersemiconductor devices.

IC processing for memory and other semiconductor devices are currentlyperformed on silicon wafers having a top surface of (100) crystal plane.This surface structures was chosen over the previously used (111)crystal plane because of its comparatively low surface state density onthermally oxidized surfaces. For example, in the diamond lattice ofsilicon the (111) plane is more densely packed than the (100) plane, andthus etch rates of {111} orientated surfaces are expected to be lowerthan those with {100} orientation. Bonding orientation of the differentplanes also contributes to etchant selectivity to exposed planes. Oneetchant that exhibits such orientation dependent etching propertiesconsists of a mixture of KOH and isopropyl alcohol. For example, such amixture may etch about one hundred times faster along (100) planes thanalong (111) planes.

Various chemistries have been used to etch silicon. For example, bothsingle crystal and polycrystalline silicon may be wet etched in mixturesof nitric acid (HNO3) and hydrofluoric acid (HF). With use of suchetchants, the etching may be isotropic. The reaction is initiated by theHNO3, which forms a layer of silicon dioxide on the silicon, and the HFdissolves the silicon oxide away. In some cases, water is used to dilutethe etchant, with acetic acid (CH3COOH) used as a buffering agent.

Wafers having the top surface of {100} crystal plane are currentlyprovided with a registration mark in the orthogonal <110> direction. ICprocessing of the wafer is then performed using this <110> registrationmark. Hence, masks are aligned along the <110> direction.

Integrated circuitry can be fabricated relative to one or both of bulksemiconductor substrates, such as silicon wafers, and semiconductor oninsulator (SOI) substrates. SOI forms a semiconductor layer, e.g.,silicon, onto an insulator, e.g., silicon dioxide. One method of formingSOI circuitry, at least in part, includes epitaxially growing singlecrystalline silicon electively from a single crystalline surface.Unfortunately in some instances epitaxially grown silicon tends to formcrystalline defects, known as dislocations and stacking faults, whichcan result in undesired leakage within or between the resultingfabricated devices.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example silicon comprising semiconductor wafer.

FIG. 2 is a three dimensional cross sectional view illustrating cutsoriented along different crystalline direction of the silicon comprisingmaterial.

FIGS. 3A-1 through 3K-2 illustrate a NAND Flash process embodimentaccording to the present disclosure.

FIGS. 4A-1 through 4F-2 illustrate a dynamic random access memory (DRAM)process embodiment according to the present disclosure.

FIGS. 5A-1 through 5J-3 illustrates a pseudo silicon on insulator (PSOI)involving epitaxially grown single crystalline silicon processembodiment involving epitaxially grown single crystalline siliconaccording to the present disclosure.

FIG. 6 illustrates an example of an embodiment of an electronic systemwhich includes structures formed in epitaxially grown silicon accordingto the embodiments of the present disclosure.

FIG. 7 is a functional block diagram of a memory module having at leastone memory device having structures formed in epitaxially grown siliconaccording to the embodiments of the present disclosure.

DETAILED DESCRIPTION

Methods, devices, and arrays are described which include semiconductordevices formed from epitaxially grown silicon. Various embodimentsreduce dislocations and/or defects in the epitaxial (“epi”) silicon andresulting devices, arrays, etc.

One method embodiment includes providing a silicon layer on a substrate,the silicon having a top surface with a (100) crystal plane. Adielectric layer is provided on the silicon layer. As one example,providing a dielectric layer can include performing a high densityplasma (HDP) oxide deposition on the silicon layer. A trench is formedin the dielectric layer to expose the silicon layer, the trench havingtrench walls in the <100> direction. The method includes epitaxiallygrowing silicon between trench walls formed in the dielectric layer.

In some embodiments, the silicon layer is provided on a wafer having aregistration mark in the <110> direction and the wafer is rotated suchthat the trench walls will be formed in the <100> direction, e.g., thewafer is rotated forty five degrees so that a mask is aligned in the<100> direction. Alternatively, the registration mark can be provided inthe orthogonal <010> direction. In some embodiments, a pre-clean whichincludes exposing the silicon layer and the trench walls to a solutionincluding a fluoride component, an oxidizing agent, and an inorganicacid, is performed prior to epitaxially growing silicon between thetrench walls.

As used herein the terms “wafer” and “substrate” may include a number ofsemiconductor-based structures that have an exposed semiconductorsurface. Structure can be understood to include silicon,silicon-on-insulator (SOI), silicon-on sapphire (SOS), doped, andundoped semiconductors. In addition, structure can be understood toinclude epitaxial layers of silicon supported by a base semiconductorfoundation. The base semiconductor foundation is typically the lowestlayer of silicon material on a wafer or a silicon layer deposited onanother material.

The semiconductor need not be silicon-based. For example, thesemiconductor can be silicon-germanium, germanium, or gallium-arsenide.When reference is made to “wafer” and “substrate” in the followingdescription, previous process steps may have been utilized to formregions or junctions in or on the semiconductor structure and/orfoundation. When reference is made to a substrate assembly, variousprocess steps may have been previously used to form or define regions,junctions, various structures or features, and openings such ascapacitor plates or barriers for capacitors.

As used herein, “layer” can refer to a layer formed on a substrate usinga deposition process, e.g., plasma and/or chemical vapor deposition(CVD) process. The term “layer” is meant to include layers specific tothe semiconductor industry, such as “barrier layer”, “dielectric layer”,and “conductive layer”. The term “layer” is also meant to include layersfound in technology outside of semiconductor technology, such ascoatings on glass.

In the Figures, the first digit of a reference number refers to theFigure in which it is used, while the remaining two digits of thereference number refer to the same or equivalent parts of embodiment(s)of the present disclosure used throughout the several figures of thedrawing. The scaling of the figures does not represent precisedimensions and/or dimensional ratios of the various elements illustratedherein.

FIG. 1 an example silicon comprising semiconductor wafer 100. The waferincludes a number of unsingulated die 102 for undergoing integratedcircuit fabrication and processing thereupon. As shown in FIG. 1, suchwafers 100 are provided with a registration mark, shown in this exampleas wafer edge 103, which is used to orient the integrated circuitfabrication and processing steps in the <110> direction. As shown, suchwafers 100 are also provided with a top surface 101 exposing the (100)crystalline plane of the silicon thereon. Embodiments of the presentdisclosure, which are discussed more below, involve rotating the wafer100 such that integrated circuit fabrication and processing are insteadoriented along the <100> direction of the silicon crystalline structureprovided on the wafer 100.

FIG. 2 is a three dimensional cross sectional view illustrating cutsoriented along different crystalline direction of the silicon comprisingmaterial. The three dimensional view of FIG. 2 illustrate a top surface202 having a (100) silicon crystal plane. FIG. 2 illustrates a threedimensional cut 210 as could be made into the silicon comprisingmaterial of the wafer in the <110> direction of silicon crystallinestructure. FIG. 2 additionally illustrates a three dimensional cut 220as is made into the silicon comprising material of the wafer along the<100> direction such that the walls, e.g., the surface 204, also runalong the <100> direction and have a (100) silicon crystal plane.According to the embodiments described below, the wafer, e.g., wafer 100shown in FIG. 1, is oriented such that integrated circuit fabricationand processing is performed with cuts being made into the siliconcomprising material of the wafer to form walls in the <100> crystaldirection versus the <110> crystal direction.

FIGS. 3A-1 through 3K-2 illustrate a NAND Flash process embodimentaccording to the present disclosure. FIG. 3A-1 illustrates a top view ofa portion of a memory die, e.g., as can be formed on a semiconductorwafer as shown in FIG. 1. The illustrated portion is intended torepresent that portion of a memory die whereupon a memory cell array isto be formed. The illustrated portion include a top surface 302 ofsingle crystalline silicon having a (100) crystal plane. In theembodiment of FIG. 3A-1 the illustrated surface 302 can be etched toopen the memory cell array while creating periphery shallow trenchisolation (STI) on the die, as will be appreciated by one of ordinaryskill in the art. Hence, FIG. 3A-2 illustrates a side view cross sectiontaken along-cut line 3A-2 reflecting the recessed single crystallinesilicon 302 in the memory cell array portion of the die.

FIG. 3B-1 illustrates a top view of the portion of the die after a nextsequence of processing steps. In FIG. 3B-1 a fill of dielectric material304 is provided to the opened portions of the memory die. In variousembodiments the dielectric fill is an STI oxide fill, e.g., using adielectric such as TEOS. In FIGS. 3B-1 and 3B-2 the fill has beenperformed for the periphery of the array along with a subsequentplanarization, e.g. chemical mechanical planarization (CMP). In theprocess that portion of the memory die whereupon a memory cell array isto be formed can also be concurrently filled with oxide 304 andplanarized. FIG. 3B-2 provides the cross-sectional side view taken alongcut line 3B-2 showing the oxide layer 304 formed above the singlecrystalline silicon 302.

In FIG. 3C-1 a hardmask 308 is formed over the oxide layer 306 on thewafer, e.g., using photolithographic techniques. According toembodiments of the present disclosure, the hardmask 308 is patterned toform lines oriented in the <100> direction of the underlying singlecrystalline silicon. In various embodiments this can involve rotating asupporting wafer which has an original registration mark intended toorient processing steps in the <110> direction such that the processsequence will instead orient the hardmask 308 along the <100> directionof the underlying single crystalline silicon. FIG. 3C-2 provides thecross-sectional side view taken along cut line 3C-2. FIGS. 3C-1 and 3C-2illustrate an optional additional dielectric layer, e.g., TiN layer, 306which can be provided, e.g., using a chemical vapor deposition (CVD), toafford added smoothness and/or a sacrificial layer for removal later inthe process flow. FIG. 3C-2 thus illustrates a side view of the hardmask308 patterned in the <100> direction on the oxide layer 304 and anadditional dielectric layer 306.

FIGS. 3D-1 and 3D-2 illustrate a top view and a side view of the portionof the die after a next sequence of processing steps. In FIGS. 3D-1 and3D-2 the hardmask and oxide layer 306 have been etched, e.g., using awet etch, plasma etch, or other suitable technique, etc., to expose thesingle crystalline silicon 302 with lines for the NAND array patternedin the <100> direction. Hence, what is shown in top view of FIG. 3D-1are lines of the sacrificial dielectric layer 306 and lines of theexposed single crystalline silicon 302 oriented along the <100>direction of exposed single crystalline silicon 302. FIG. 3D-2 is thecross section taken along cut line 3D-2 illustrating the remainingsacrificial dielectric layer 306 on columns of oxide 304 and the exposedsingle crystalline silicon 302 underneath. The embodiments describedherein have thus formed a number of trenches in the oxide dielectricmaterial 304 having trench walls 305 in the <100> direction relative tothe exposed the single crystalline silicon 302 underneath.

In FIG. 3E-1 the hardmask 308 and sacrificial dielectric layer 306 havebeen removed, e.g., using a selective etch, etc. According to variousembodiments the exposed surfaces are pre-cleaned before next epitaxiallygrowing single crystalline silicon between trench walls 305 formed inthe oxide dielectric layer 304. FIG. 3E-2 is a cross sectional viewshowing the trench walls 305 formed in the oxide dielectric layer 304with the exposed single crystalline silicon 302 below and therebetween.In various embodiments the pre-clean includes exposing the singlecrystalline silicon 302 to a solution including a fluoride component, anoxidizing agent, and an inorganic acid. One example of exposing thesingle crystalline silicon 302 to a solution including a fluoridecomponent, an oxidizing agent, and an inorganic acid is provided in acopending, commonly assigned U.S. patent application entitled, “Wet EtchSuitable for Creating Square Cuts in Si and Resulting Structures”, Ser.No. 11/445,718, filed Jun. 2, 2006, which is incorporated in fullherein.

FIGS. 3F-1 and 3F-2 illustrate a top view and a side view of the portionof the die after a next sequence of processing steps. In FIGS. 3F-1 and3F-2 single crystalline silicon 312 has been epitaxially grown from theexposed single crystalline silicon 302 in the channels formed by thewalls of the trenches 305 in the oxide dielectric material 304. A padoxide 310 can then be grown, e.g., O₂ or H₂O diffusion, and planarizedor etched back to provide the structure shown in FIGS. 3F-1 and 3F-2.According to the process embodiments described herein the epitaxiallygrown single crystalline silicon 312 is substantially free ofdislocations. That is, due to the process of epitaxially growing thesingle crystalline silicon 312 between dielectric walls 304 oriented inthe <100> direction relative to the exposed single crystalline silicon302 any dislocations are pinned at the semiconductor/dielectricinterface, e.g., along trench walls 305. Thus, according to this exampleembodiment, the low defects enables STI scaling of NAND Flash stripesdown as far as oxide may be patterned without the complication of spinon dielectric (SOD) or high density plasma (HDP) fill and densificationat STI. The oxide fins 304 created here can be approximately 20nanometers (nm) wide which will allow STI scaling down to a feature sizeof 20 nm (F=20 nm).

In contrast, other process flows have tackled epitaxially growing singlecrystalline silicon over geometric features in silicon (Si) orsilicon/germanium (Si/Ge) but these works have all directed theirattention to dislocations being pinned at interfaces of thesemiconductors. One example of this is provided in a copending, commonlyassigned U.S. patent application entitled, “Integrated Circuits andMethods of Forming a Field Effect Transistor”, application Ser. No.11/076,774, filed Mar. 10, 2005, and which is incorporated in fullherein.

FIGS. 3G-1 and 3G-2 illustrate a top view and a side view of the portionof the die after a next sequence of processing steps. In FIGS. 3G-1 and3G-2 implants to the cell array and array periphery work have beencompleted. Cell tunnel oxide 314 is grown from the pad oxide 310. Thefloating gate 316, e.g., polysilicon, can next be deposited, e.g., byCVD, etc., and a dielectric layer, sacrificial oxide 318 appliedthereover, e.g., by SOD.

As shown in FIGS. 3H-1 and 3H-2, the structure can then be planarized,e.g., by CMP, down to the original STI oxide level, e.g., top surfacelevel of the oxide dielectric layer 304, or optional sacrificialdielectric layer 306, e.g., nitride cap, if one was applied.

In FIGS. 3I-1 and 3I-2, the floating gate polysilicon 316 in the cellarray can be recessed. The cell array structure is now appears in thetop view illustration of FIG. 3I-1 and in the side view of FIG. 3I-2taken along cut line 3I-2.

In FIGS. 3J-1 and 3J-2, the resulting structure is illustrated after thesacrificial oxide 318 has been removed and the oxide dielectric layer304 has been leveled to beneath a top surface of the floating gates 316.The cell array structure is now as appears in the top view illustrationof FIG. 3J-1 and in the side view of FIG. 3J-2 taken along cut line3J-2.

In FIGS. 3K-1 and 3K-2, the resulting NAND cell array structure isillustrated after a high vacuum oxide 320 is applied and a control gatematerial 322 is applied which can be patterned. The cell array structureis now appears in the top view illustration of FIG. 3K-1 and in the sideview of FIG. 3K-2 taken along cut line 3J-2.

FIGS. 4A-1 through 4F-2 illustrates a dynamic random access memory(DRAM) process embodiment according to the present disclosure. FIG. 4A-1illustrates a top view of a portion of a memory die, e.g., as can beformed on a semiconductor wafer as shown in FIG. 1. The illustratedportion is intended to represent that portion of a memory die whereupona DRAM memory cell array is to be formed. As part of the processing atop surface of the wafer can be processed to include a top surface ofsingle crystalline silicon having a (100) crystal plane.

The top view illustrated in FIG. 4A shows an embodiment in which stripsof “Fins” 401 have been pattered into the silicon. One of ordinary skillin the art will appreciate the manner in which the wafer can be masked,patterned, and etched to create strips of silicon Fins on the wafer. Inprevious approaches a wafer would undergo DRAM processing using aregistration intended to orient the processing steps in the <110>direction as shown in FIG. 1.

According to embodiments of the present disclosure, however, the waferis rotated relative to the original <110> direction registration marksuch that the wafer is oriented in the <100> direction as shown by arrow400. In the embodiments described herein, it is while the wafer isoriented in the <100> direction that the top surface of the wafer ismasked, patterned, and etched to create the strips of silicon Fins 401on the wafer. As such, the strips of single crystalline silicon Finsshown in FIGS. 4A-4F-2 are oriented along the <100> direction of theunderlying single crystalline silicon.

FIG. 4A-2 provides the cross-sectional side view taken along cut line4A-2. FIG. 4A-2 illustrates that a pad oxide layer 406 and asilicon-nitride layer 404 masking material are used and patterned beforeetching to form the strips of single crystalline silicon Fins 401 on thewafer. The pad oxide 406 and nitride layer 404 can be deposited, forexample, using CVD. A photolithographic etch process can be employed asused for the STI formation. In various embodiments a light wet nitrideetch can be employed to reduce the nitride 404 critical dimension, e.g.,from approximately 1.0 photolithographic feature (1F), above the singlecrystalline silicon Fins 401 and expose the single crystalline siliconalong the nitride 404. The example embodiment of FIG. 4A-1 illustratesthe single crystalline Fins 404 having a 1F dimension with a 6Fdimension between the single crystalline silicon Fins 401. However, asthe reader will appreciate the pattern can be modified to achievevarious single crystalline silicon channel dimensions as tied to thesubstrate of the wafer.

FIGS. 4B-1 and 4B-2 illustrate a top view and a side view of the portionof the die after a next sequence of processing steps. As shown in FIGS.4B-1 and 4B-2 the structure of FIGS. 4A-1 and 4A-2 has been patternedfor the addition of a buried oxide (BOX) 408 which has been filled intothe space between the single crystalline silicon Fins 401 andplanarized, e.g., using CMP, as part of the STI formation process. Theside view of FIG. 4B-2 thus illustrates a cross sectional view of thestructure taken along cut line 4A-2 in FIG. 4A-1. FIG. 4A-2 illustratesthe BOX 408 between the single crystalline silicon Fins 401 formed inthe single crystalline silicon surface 402 of the wafer. FIG. 4A-2illustrates the pad oxide 406 and the nitride 408 remaining on the topof the single crystalline silicon Fins 401 oriented in strips along the<100> direction as well as on the top of the periphery to the DRAMmemory cell array. The BOX 408 between the single crystalline siliconFins 401 formed in the single crystalline silicon surface 402 of thewafer effectively provides isolation trenches. The BOX 408 embodiment inFIGS. 4B-1 and 4B-2 is illustrated without the inclusion of a nitrideliner thereto.

FIGS. 4C-1 and 4C-2 illustrate a top view and a side view of the portionof the die after a next sequence of processing steps. In FIGS. 4C-1 and4C-2 the BOX 408 has been recessed to below a top surface 409, as shownin FIG. 4D-2, of the single crystalline silicon Fins 401. According tovarious embodiments of the present disclosure, the exposed singlecrystalline silicon surfaces are pre-cleaned before next epitaxiallygrowing single crystalline silicon 410 between trench walls 412 formedfrom recessing the BOX 408. In various embodiments the pre-cleanincludes exposing the single crystalline silicon of the trench walls 412to the Fins 401 to a solution including a fluoride component, anoxidizing agent, and an inorganic acid. One example of exposing thesingle crystalline silicon of the trench walls 412 to a solutionincluding a fluoride component, an oxidizing agent, and an inorganicacid is provided in a copending, commonly assigned U.S. patentapplication entitled, “Wet Etch Suitable for Creating Square Cuts in Siand Resulting Structures”, Ser. No. 11/445,718, filed Jun. 2, 2006,which is incorporated in full herein.

FIG. 4C-2 illustrates a side view of the portion of the die afterepitaxially growing the single crystalline silicon 410 from the trenchwalls 412. According to the process embodiments described herein theepitaxially grown single crystalline silicon 410 is substantially freeof dislocations. That is, due to the process of epitaxially growing thesingle crystalline silicon 410 between dielectric walls, e.g., thenitride 404, oriented in the <100> direction relative to the exposedsingle crystalline silicon 402 any dislocations are pinned at thesemiconductor/dielectric interface, e.g., along nitride walls 404. Thus,according to this example embodiment, the low defects enable DRAM accesstransistors to be formed, as described further below, in the epitaxialsingle crystalline silicon 410. In various embodiments, this achievesreduced stress in the active area of small geometry DRAM material toenable low defect retrograde access fins or recessed access devices(RADs) and Fin field effect transistor (FinFET) structures. As thereader will appreciate, the epitaxial single crystalline silicon 410material can be cut across the trenches 412 by patterning and etching toenable isolation of DRAM or NOR devices using, for example, STItechniques in one direction of isolation.

In contrast, other process flows have tackled epitaxially growing singlecrystalline silicon over geometric features in silicon (Si) orsilicon/germanium (Si/Ge) but these works have all directed theirattention to dislocations being pinned at interfaces of thesemiconductors. One example of this is provided in a copending, commonlyassigned U.S. patent application entitled, “Integrated Circuits andMethods of Forming a Field Effect Transistor”, application Ser. No.11/076,774, filed Mar. 10, 2005, and which is incorporated in fullherein.

The top view of FIG. 4C-1 illustrates the epitaxially grown singlecrystalline silicon 410 formed only between trench walls 412 of thesingle crystalline silicon Fins 410. However, the cross sectional viewof FIG. 4C-2 illustrates that embodiments are not so limited and thatthe epitaxially grown single crystalline silicon may be grown to connectand form overtop the nitride 404.

FIGS. 4D-1 and 4D-2 illustrate a top view and a side view embodiment ofthe portion of the die after a next sequence of processing steps. InFIGS. 4D-1 and 4D-2 the epitaxially grown single crystalline silicon 410is planarized, e.g., by CMP, to the nitride 404. The exposed nitride 404and pad oxide 406 can next be removed, e.g., by using a wet strip, etc.,to reveal the structure shown in the cross sectional view of FIG. 4D-2.As the reader will appreciate, an STI flow process can next be followedto continue with forming DRAM cells.

FIGS. 4E-1 and 4E-2 illustrate the structure after a next sequence ofprocessing steps. As represented by the top view and side viewembodiment of FIGS. 4E-1 and 4E-2 another pad oxide layer and anothernitride layer can be deposited and patterned for the formation ofadditional trench isolation 412 and to define cell array active areas414 and peripheral active areas 402. FIG. 4E-2 is a cross sectional viewillustrating the same taken along 4E-2. A selective wet etch can beperformed to remove the nitride and an HF clean can be performed toremove the pad oxide. FIGS. 4E-1 and 4E-2 illustrate both the exposedsingle crystalline silicon epitaxial regions 412 and the singlecrystalline silicon layer 402 of the wafer.

FIGS. 4F-1 and 4F-2 illustrate the structure after a next sequence ofprocessing steps. Embodiments for integrated circuitry in fabrication ofDRAM cell array and peripheral gate is represented by the top view andside view embodiment of FIGS. 4F-1 and 4F-2. In particular the crosssectional view shown in FIG. 4F-2 illustrates a number of gatestructures 415-1, 415-2, 415-3, . . . , 415-N for the cell array and theperipheral gate 415-P. In various embodiments, each of the gatestructures 415 includes a gate dielectric layer 416, a conductivelydoped polysilicon region 417, conductive metal or metal silicide region418, and insulative caps 420. Electrically insulative sidewall spacers(not shown) are received about the respective gate structures.Electrically insulative material is illustrated at 408 (trench isolationBOX) and 412 (STI oxide for isolating adjacent devices) as the same havebeen described above.

In the cross sectional embodiment of FIG. 4F-2 the epitaxially grownsingle crystalline silicon 410 is illustrated as forming a source region421 and a channel region 422. In this embodiment, the shared drainregion 423 is illustrated as formed from the single crystalline silicon402 of the wafer. The cell array structure is now as appears in the topview illustration of FIG. 4F-1 and in the side view of FIG. 4F-2 takenalong cut line 4F-2. One of ordinary skill in the art will appreciatethe manner in which electrically conductive contacts can be formed toconnect with the source and drain regions, respectively, and the DRAMfabrication process continued and completed as suitable for particularimplementations. As such more detail is not provided hereafter.

FIGS. 5A-1 through 5K-3-2 illustrates a pseudo silicon on insulator(PSOI) involving epitaxially grown single crystalline silicon processembodiment involving epitaxially grown single crystalline siliconaccording to the present disclosure. FIG. 5A-1 illustrates a top view ofa portion of a memory die, e.g., as can be formed on a semiconductorwafer as shown in FIG. 1. The illustrated portion is intended torepresent that portion of a memory die whereupon a DRAM memory cellarray is to be formed. As part of the processing a top surface of thewafer can be processed to include a top surface of single crystallinesilicon having a (100) crystal plane.

The top view illustrated in FIG. 5A shows an embodiment in which photoresist lines orthogonal to planned epitaxially single crystal siliconovergrowth in the <100> direction is planned. One of ordinary skill inthe art will appreciate the manner in which the wafer can be masked andpatterned. In previous approaches a wafer would undergo DRAM processingusing a registration intended to orient the processing steps in the<110> direction as shown in FIG. 1.

According to embodiments of the present disclosure, however, the waferis rotated relative to the original <110> direction registration marksuch that the wafer is oriented in the <100> direction as shown by arrow500. In the embodiments described herein, it is while the wafer isoriented in the <100> direction that the top surface of the wafer ismasked and patterned to create the strips of photo resist lines 506 onthe wafer.

FIG. 5A-2 provides the cross-sectional side view taken along cut line5A-2. FIG. 5A-2 illustrates that a silicon-nitride 504 hardmask layerhas been applied beneath the patterned strips of photo resist lines 506in the <100> direction and over the underlying substrate 502 of thewafer. One of ordinary skill in the art will appreciate that thesubstrate 502 portion shown can include bulk semiconductive siliconcomprising material and may include a layer of single crystallinesilicon.

FIGS. 5B-1 and 5B-2 illustrate a top view and a side view of the portionof the die after a next sequence of processing steps. As shown inembodiment of FIGS. 5B-1 and 5B-2 the structure of FIGS. 5A-1 and 5A-2has undergone an anisotropic etch to etch into the nitride hardmask 504and the single crystalline silicon 502. In particular the crosssectional view of FIG. 5B-2 illustrates the trench walls 505 formed inthe <100> direction in the single crystalline silicon 502 from the etchprocess above. In various embodiments, the trenches can be formed to adepth in the range of 500 to 3000 Angstroms. Embodiments, however, arenot limited to this example.

Additionally, using various photolithographic techniques, a width to thetrenches can be patterned to provide a particular dimension to thetrenches. However, due to factors such as optics and light or radiationwavelength, photolithography techniques each have a minimum pitch belowwhich a particular photolithographic technique cannot reliably formfeatures. Pitch is defined as the distance between an identical point intwo neighboring features. These features are typically defined byopenings in, and spaced from each other by, a material, such as aninsulator or conductor. As a result, pitch can be viewed as the sum ofthe width of a feature and of the width of the space separating thatfeature from a neighboring feature.

As one of ordinary skill in the art will appreciate “pitch doubling” isone method for extending the capabilities of photolithographictechniques beyond their minimum pitch and can be used in forming thetrenches shown in various embodiments. One example method for the sameis described in U.S. Pat. No. 5,328,810, issued to Lowrey et al., theentire disclosure of which is incorporated herein by reference. As aresult, the smallest feature size possible with a photolithographictechnique is effectively decreased. It will be appreciated that whilethe pitch is actually reduced by such techniques this reduction in pitchcan be referred to as pitch “doubling” or more generally, pitch“multiplication”. That is, “multiplication” of pitch by a certain factoractually involves reducing the pitch by that factor. This terminology isretained herein. Note that by forming spacers upon spacers, thedefinable feature size can be further decreased. Thus, pitchmultiplication refers to the process generally, regardless of the numberof times the spacer formation process is employed.

FIGS. 5C-1 and 5C-2 illustrate a top view and a side view of the portionof the die after a next sequence of processing steps. As shown inembodiment of FIGS. 5C-1 and 5C-2 an optional silicon nitride (Si₃N₄)liner and spacer etch can be performed to create nitride spacers 508along trench walls 505 of the single crystalline silicon 502. Thestructure is now as appears in FIGS. 5C-1 and 5C-2.

According to various embodiments the exposed surfaces are pre-cleanedbefore next epitaxially growing single crystalline silicon from theexposed portions of single crystalline silicon on the trench walls 505.In various embodiments the pre-clean includes exposing the singlecrystalline silicon 502 to a solution including a fluoride component, anoxidizing agent, and an inorganic acid. One example of exposing thesingle crystalline silicon 502 to a solution including a fluoridecomponent, an oxidizing agent, and an inorganic acid is provided in acopending, commonly assigned U.S. patent application entitled, “Wet EtchSuitable for Creating Square Cuts in Si and Resulting Structures”, Ser.No. 11/445,718, filed Jun. 2, 2006, which is incorporated in fullherein.

FIGS. 5D-1 and 5D-2 illustrate a top view and a side view of the portionof the die after a next sequence of processing steps. In FIGS. 5D-1 and5D-2 single crystalline silicon has been epitaxially grown from theexposed single crystalline silicon 502 with merging fronts 510. Invarious embodiments an optional polysilicon layer 512 is applied overthe top, e.g., via CVD. According to the embodiments described herein,the epitaxial overgrowth 510 above the dielectric fins, e.g., nitridespacers 508 is substantially free of dislocations. That is, due to theprocess of epitaxially overgrowing the single crystalline silicon 510 aswould be the portion in between the dielectric 508, as described inconnection with FIGS. 3 and 4, hence enabling a PSOI DRAM accesstransistor to be formed as described further below.

According to various embodiments, the dielectric (here, nitride spacers508) can be recessed to allow epitaxial silicon growth 510 over the gaps509 which will merge (100) single crystalline silicon planes. As thereader will appreciate this embodiment allows PSOI DRAM devices withoutusing two (2) CMPs.

FIGS. 5E-1 and 5E-2 illustrate a top view and a side view of the portionof the die after a next sequence of processing steps. In FIGS. 5E-1 and5E-2 an optional silicon buff polish can be performed to planarize. Asthe reader will appreciate the top surface may be planarized andpattered to open some of the dielectric wall, e.g., nitride spacers 508,to enable recessed access device (RAD) construction. Also, dielectricwall height oriented in the <100> direction can be set be recessing thedielectric in some places and not others prior to opening the singlecrystalline silicon for epitaxial single crystalline silicon growth.

FIGS. 5F-1 and 5F-2 illustrate a top view and a side view of the portionof the die after a next sequence of processing steps. As shown in FIGS.5F-1 and 5F-2 a nitride hardmask is deposited, e.g., via CVD, and can bepatterned 516 using various photolithographic techniques to create apatterned nitride 514 over the epitaxially grown single crystallinesilicon 510 as will be used to define islands in STI oxide.

FIG. 5G-1 illustrates a top view of the portion of the die after thenext sequence of processing steps. FIGS. 5G-2 and 5G-3 illustrate crosssectional views taken along cut lines 5G-2 and 5G-3, respectively, shownin FIG. 5G-1. In FIGS. 5G-1, 5G-2, and 5G-3 the nitride 514 andepitaxially grown single crystalline silicon 510 have been etched usinga plasma dry etch, e.g., using a Br, Ar base gas recipe, to defineislands 511 as shown by contrasting cross sectional views of FIGS. 5G-2and 5G-3 along those respective cut lines from 5G-1 as well as undercutsource/drain regions 509. The nitride spacers 508 shown in FIG. 5G-3 canoptionally be removed by a dry etch or a wet etch.

FIG. 5H-1 illustrates a top view of the portion of the die after thenext sequence of processing steps. FIGS. 5H-2 and 5H-3 illustrate crosssectional views taken along cut lines 5H-2 and 5H-3, respectively, shownin FIG. 5H-1. In FIGS. 5H-1, 5H-2, and 5H-3 a spin on dielectric (SOD)oxide deposition 518 and planarization, e.g. via CMP, have beenperformed to complete the STI sequence. The structure is now as appearsin FIGS. 5H-1, 5H-2, and 5H-3 showing oxide 518 in the undercutsource/drain regions in the view of 5H-2 and in isolation regionsoutside of the active regions of the devices to be formed in the view of5H-3.

FIGS. 5I-1 illustrates a top view of the portion of the die after thenext sequence of processing steps. FIGS. 5I-2 and 5I-3 illustrate crosssectional views taken along cut lines 5I-2 and 5I-3, respectively, shownin FIG. 5I-1. In FIGS. 5I-1, 5I-2, and 5I-3 the nitride 514 from FIGS.5H-1, 5H-2, and 5H-3 has been removed, e.g., using a nitride wet etch orother suitable technique.

FIG. 5J-1 illustrates a top view of the portion of the die after thenext sequence of processing steps. FIGS. 5J-2 and 5J-3 illustrate crosssectional views taken along cut lines 5J-2 and 5J-3, respectively, shownin FIG. 5J-1. In FIGS. 5J-1, 5J-2, and 5J-3 the structure illustrates aDRAM device array having gates 519 over the silicon island body ties511. The gates 519 and source/drain regions (not enumerated) can beformed, for example, according to the process embodiment described abovein connection with FIGS. 4F-1 and 4F-2. That is each of the gates 519can be formed to include a gate dielectric layer 520, a conductivelydoped polysilicon region 521, conductive metal or metal silicide region522, and insulative caps 523. The gates 519 are thus formed over theepitaxially grown single crystalline silicon 510 which serves as achannel region connected to island 511 body ties as shown in crosssectional view 5J-2 and pass over the oxide isolation material 518outside of the active areas of the DRAM cells as shown in the crosssectional view of 5J-3. The source/drain regions are thus formed in theepitaxially grown single crystalline silicon 510 undercut by the oxideisolation material 518 as shown in the cross sectional view of FIG.5J-2. One of ordinary skill in the art will appreciate the manner inwhich electrically conductive contacts can be formed to connect with thesource and drain regions, respectively, and the DRAM fabrication processcontinued and completed for the PSOI DRAM devices according to theseembodiments as suitable for particular implementations. As such moredetail is not provided hereafter.

FIG. 6 illustrates an example of an embodiment of an electronic system600 which includes structures formed in epitaxially grown siliconaccording to the embodiments of the present disclosure. The system 600illustrated in the embodiment of FIG. 6 includes a memory device 602that includes an array of memory cells 604 formed according to theembodiments described herein, an address decoder 606, row accesscircuitry 608, column access circuitry 610, control circuitry 612,Input/Output (I/O) circuitry 614, and an address buffer 616.

Electronic system 600 includes an external processor 620, e.g., a memorycontroller or host processor, electrically connected to memory device602 for memory accessing. The memory device 602 receives control signalsfrom the processor 620 over a control link 622. The memory cells areused to store data that are accessed via a data (DQ) link 624. Addresssignals are received via an address link 626 that are decoded at addressdecoder 606 to access the memory array 604. Address buffer circuit 616latches the address signals. The memory cells are accessed in responseto the control signals and the address signals.

FIG. 7 is a functional block diagram of a memory module 700 having atleast one memory device having structures formed in epitaxially grownsilicon according to the embodiments of the present disclosure. Memorymodule 700 is illustrated as a memory card, although the conceptsdiscussed with reference to memory module 700 are applicable to othertypes of removable or portable memory (e.g., USB flash drives) and areintended to be within the scope of “memory module” as used herein. Inaddition, although one example form factor is depicted in FIG. 7, theseconcepts are applicable to other form factors as well.

In some embodiments, memory module 700 will include a housing 705 toenclose one or more memory devices 710, though such a housing is notessential to all devices or device applications. The housing 705includes one or more contacts 715 for communication with a host device.Examples of host devices include digital cameras, digital recording andplayback devices, PDAs, personal computers, memory card readers,interface hubs and the like. For some embodiments, the contacts 715 arein the form of a standardized interface. For example, with a USB flashdrive, the contacts 715 might be in the form of a USB Type-A maleconnector. For some embodiments, the contacts 715 are in the form of asemi-proprietary interface, such as might be found on CompactFlash™memory cards licensed by SanDisk Corporation, Memory Stick™ memory cardslicensed by Sony Corporation, SD Secure Digital™ memory cards licensedby Toshiba Corporation and the like. In general, however, contacts 715provide an interface for passing control, address and/or data signalsbetween the memory module 700 and a host having compatible receptors forthe contacts 715.

The memory module 700 may optionally include additional circuitry 720,which may be one or more integrated circuits and/or discrete components.For some embodiments, the additional circuitry 720 may include a memorycontroller for controlling access across multiple memory devices 710and/or for providing a translation layer between an external host and amemory device 710. For example, there may not be a one-to-onecorrespondence between the number of contacts 715 and a number ofconnections to the one or more memory devices 710. Thus, a memorycontroller could selectively couple an I/O connection (not shown in FIG.7) of a memory device 710 to receive the appropriate signal at theappropriate I/O connection at the appropriate time or to provide theappropriate signal at the appropriate contact 715 at the appropriatetime. Similarly, the communication protocol between a host and thememory module 700 may be different than what is required for access of amemory device 710. A memory controller could then translate the commandsequences received from a host into the appropriate command sequences toachieve the desired access to the memory device 710. Such translationmay further include changes in signal voltage levels in addition tocommand sequences.

The additional circuitry 720 may further include functionality unrelatedto control of a memory device 710 such as logic functions as might beperformed by an ASIC. Also, the additional circuitry 720 may includecircuitry to restrict read or write access to the memory module 700,such as password protection, biometrics or the like. The additionalcircuitry 720 may include circuitry to indicate a status of the memorymodule 700. For example, the additional circuitry 720 may includefunctionality to determine whether power is being supplied to the memorymodule 700 and whether the memory module 700 is currently beingaccessed, and to display an indication of its status, such as a solidlight while powered and a flashing light while being accessed. Theadditional circuitry 720 may further include passive devices, such asdecoupling capacitors to help regulate power requirements within thememory module 700.

CONCLUSION

Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., andmethods of fabrication have been described that include a method ofepitaxial silicon growth. The method includes providing a silicon layeron a substrate. A dielectric layer is provided on the silicon layer. Atrench is formed in the dielectric layer to expose the silicon layer,the trench having trench walls in the <100> direction. The methodincludes epitaxially growing silicon between trench walls formed in thedielectric layer. The single crystalline silicon is grown substantiallyfree of dislocations. That is, the various techniques described hereinprovide a process of epitaxially growing the single crystalline siliconoriented in the <100> direction relative to the underlying siliconcrystalline structures such that any defects are pinned atsemiconductor/dielectric interfaces, e.g., along trench walls.

In various embodiments, such epitaxially grown single crystallinesilicon can be grown substantially free of dislocations at multipleelevations and then overgrowth methods used to create defect freesilicon over silicon (SOS), hence stacking devices, e.g., transistors atmultiple levels. Other devices such as pass gates or local amplifiersatop contacts which contact lower level gate and source/drain regionscould similarly be constructed using the embodiments described herein.Additionally building micro electro mechanical (MEM) structures oroptical electrical devices out of silicon on (100) crystal planes may beenabled by the ability to put down substantially defect free epitaxiallygrown single crystalline silicon as described herein.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of various embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the various embodiments ofthe present disclosure includes other applications in which the abovestructures and methods are used. Therefore, the scope of variousembodiments of the present disclosure should be determined withreference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, various features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

1. A NAND array of memory cells, comprising: a number of non-volatilememory cells having floating gates formed over epitaxially (epi) grownsingle crystalline silicon, wherein the epi grown single crystallinesilicon is formed between dielectric walls oriented in a <100> directionrelative to the epi grown single crystalline silicon; and wherein theNAND array has a feature size of not more than approximately 20nanometers (nm).
 2. The memory cell array of claim 1, wherein the epigrown single crystalline silicon is substantially defect free havingdislocations pinned between the epi grown single crystalline silicon andthe dielectric walls.
 3. The memory cell array of claim 1, wherein theepi grown single crystalline silicon is formed over a single crystallinesilicon layer having a (100) crystal plane.
 4. The memory cell array ofclaim 1, wherein a high vacuum oxide is formed over the floating gates.5. A memory cell array, comprising: a number of DRAM cells located abovea dielectric isolation material formed in a trench without a nitrideliner, wherein each DRAM cell includes: a gate located above a channelregion formed in a layer of epitaxially (epi) grown single crystallinesilicon; a source region adjacent the channel and formed in the layer ofepi grown single crystalline silicon; and a drain region adjacent thechannel and formed in the layer of epi grown single crystalline silicon;and wherein the DRAM cells are separated by single crystalline siliconFins with a photolithographic feature dimension of approximately 1.0(1F).
 6. The memory cell array of claim 5, wherein the epi grown singlecrystalline silicon is substantially defect free having dislocationspinned between the epi grown single crystalline silicon and thedielectric isolation material.
 7. The memory cell array of claim 5,wherein the trench includes walls oriented in a <100> direction relativeto the epi grown single crystalline silicon.
 8. The memory cell array ofclaim 5, wherein the single crystalline silicon Fins are separated witha photolithographic feature dimension of approximately 6.0 (6F).
 9. Thememory cell array of claim 5, wherein the layer of epi grown singlecrystalline silicon is formed over a single crystalline silicon layerhaving a (100) crystal plane.
 10. A memory cell array, comprising: anumber of devices located above a dielectric isolation material, whereinthe devices are formed from epitaxially (epi) grown single crystallinesilicon, the epi grown single crystalline silicon having a number offins of silicon connecting the epi grown single crystalline siliconthrough the dielectric isolation material to a substrate; a wall surfaceof the number of fins oriented in a <100> direction relative to the epigrown single crystalline silicon.
 11. The memory cell array of claim 10,wherein the number of devices are part of a recessed access device(RAD).
 12. The memory cell array of claim 10, wherein the number ofdevices are part of a micro electro mechanical (MEM) structure.
 13. Thememory cell array of claim 10, wherein the number of devices are part ofan optical electrical device.
 14. The memory cell array of claim 10,wherein the number of fins have a feature size obtained according to apitch multiplication technique.
 15. The memory cell array of claim 10,wherein the number of devices are DRAM cells, and wherein each DRAM cellincludes: a gate located above a channel region formed in the epi grownsingle crystalline silicon; a source region adjacent the channel andformed in the epi grown single crystalline silicon; and a drain regionadjacent the channel and formed in the epi grown single crystallinesilicon.
 16. The memory cell array of claim 10, wherein the number ofdevices include a pass gate coupled to the epi grown single crystallinesilicon.
 17. The memory cell array of claim 10, wherein the number ofdevices include a local amplifier coupled to the epi grown singlecrystalline silicon.